Magnachip Semiconductor has introduced a new generation of discrete insulated-gate bipolar transistors (IGBTs) aimed at solar inverters and industrial energy storage systems. The launch expands the company’s power semiconductor lineup with 650 V and 1200 V devices, designed to support systems scaling up to around 150 kW.
The IGBTs are based on a field-stop trench design and are currently available in TO-247 and TO-247 Plus package formats. The update focuses on higher current capability and improved robustness under demanding switching conditions, critical for photovoltaic and storage applications where thermal margins and fault tolerance are limited.
At the chip level, Magnachip reports a 40 % reduction in cell pitch versus the previous generation, enabling higher current density and lower conduction losses within the same die size. This also simplifies layout and thermal management in paralleled inverter designs. The new devices also feature over 30 % improvement in reverse-bias safe operating area, enhancing performance under inductive load switching and abnormal conditions.
The 650 V devices handle around 75 A at elevated junction temperatures, with mid-1 V VCE(sat) values, while several variants integrate SiC Schottky diodes to reduce reverse recovery losses. The 1200 V devices offer higher current ratings and improved thermal performance for larger inverters and storage converters.
Magnachip plans future packaging updates, including a four-lead TO-247 option with Kelvin emitter, which reduces common emitter inductance and improves switching efficiency. The roadmap also includes higher-current 650 V devices and a 750 V class for applications requiring extra voltage margin without higher conduction losses.
This launch reflects Magnachip’s focus on solar and energy storage, where IGBTs remain widely used for cost-effective, reliable power conversion alongside emerging SiC devices.
Source: EE Power
