Hitachi Energy advances high-voltage semiconductors
Partnership with Pakal integrates IGTO(t) silicon switch into ≥3.3 kV modules for rail, renewables, storage and data centres.
Image for illustrative purposes
Hitachi Energy and Pakal Technologies have announced a collaboration to strengthen innovation in high-voltage power electronics. Under the agreement, Hitachi Energy will integrate Pakal’s Insulated Gate Turn-Off (Thyristor), IGTO(t)™ silicon power switch into its portfolio of high-voltage power modules.
The first applications will focus on sectors such as rail, renewable energy, energy storage, artificial intelligence and data centre infrastructure.
Semiconductors form a critical foundation of modern grids. The partnership aims to tackle one of the key challenges in large-scale electrification: reducing energy losses and improving efficiency in high-voltage power conversion. By combining Hitachi Energy’s expertise in power module design with Pakal’s IGTO(t) technology, the companies target measurable efficiency gains across energy systems.
According to the companies, the IGTO(t) delivers 30 % lower conduction losses at high current and temperature compared to widely used insulated gate bipolar transistors (IGBTs), while remaining compatible with existing module architectures. The device is described as the first new high-voltage silicon power semiconductor since the introduction of the IGBT in the 1980s.
The partners intend to develop ≥3.3 kV power semiconductor modules offering higher performance, lower operating costs and improved long-term reliability. System-level benefits include greater power density, reduced thermal and cooling requirements, and enhanced overall energy efficiency.
Source: Hitachi Energy
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